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UM9441
PIN RADIATION DETECTORS
DESCRIPTION
KEY FEATURES
WWW .Microsemi .C OM
Description Silicon PIN devices are effective detectors of nuclear and electromagnetic radiation. This includes gamma radiation, electrons, and X-rays. The detectors can be used across the temperature range of -55 oC to +175 oC instead of being restricted to use at low temperatures. The absorbed radiation produces electron-hole pairs in the space charge region. These charges are swept out by the applied field and result in a current flow proportional to the rate of absorbed radiation. The Microsemi UM9441 series utilizes high resistivity material and is designed to have a uniform area mesa structure to define the active volume. The current sensitivity of this device is proportional only to the I-region volume and is independent of
temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no degradation in gamma sensitivity resulting from a total dose of 1014 neutrons/cm2 of 1 MeV equivalent. Package The UM9441 is an axially leaded device constructed by metallurgically bonding the PIN chip in between two molybdenum refractory pins that are typically 0.125 inches in diameter and 0.050 inches long. Hyper-pure glass is then fused over this bond to form a void less seal. Leads are then brazed to ends of molybdenum pins. This results in a high-reliability package using materials so well thermally matched that the UM9441 can withstand temperature shock or cycling from -196 oC to +300 oC.
High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low operating Voltage
APPLICATIONS/BENEFITS Surface Mount package available RoHS compliant devices available
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED)
Rating Reverse Voltage Photocurrent Storage Temperature Operating Temperature T stg T op Symbol VR Value 100 3Adc -55 to +200 -55 to +175
2
Unit V 3A s pulsed C C
UM9441 UM9441
Copyright 2006 Rev. 0, 2006-03-14
Microsemi
Page 1
UM9441
PIN RADIATION DETECTORS
WWW .Microsemi .C OM
Parameter
Conditions
VR = 50 V 6 10 rads(Si)/sec 2.5 MeV Flash X-Ray Ion Physics Corporation FX-25 F = 1 MHz, V = 50 V VR = 50 V IF = 10 mA
Min
Typ.
Max
Units
Photocurrent Capacitance Reverse Current Minority Carrier Lifetime
4.0
6.0 10 1.0
mA
pF A s
2.0
PHOTOCURRENT SENSITIVITY TYPICAL
103 RADIATION SOURCE - AS NOTED PIN REVERSE VOLTAGE 50 V FLASH X-RAY
8 7 10
VOLTAGE SENSITIVITY TYPICAL
PHOTOCURRENT (mA)
FX-25
PHOTOCURRENT (mA)
6 5 4 LINAC 3
102
LINAC
101
2 ABSORBED DOSE RATE - 1E6 [rads(Si)/sec] RADIATION SOURCE - AS NOTED
100 105 106 107 108
1 0 25 50 75 100
PIN REVERSE VOLTAGE (V)
ABSORBED DOSE RATE [rads(Si)/sec]
ELECTRICAL
Copyright 2006 Rev. 0, 2006-03-14
Microsemi
Page 2
UM9441
PIN RADIATION DETECTORS
WWW .Microsemi .C OM
Reliability The UM9441 is consistent with Microsemi's reputation as a manufacturer of high reliability semiconductors. Microsemi is equipped to perform JAN type testing, base-lining and documental conformance to a wide range of reliability testing. This commitment to reliability has enabled Microsemi to be a qualified supplier of semiconductor devices to many high-reliability programs such as:
APOLLO DRAGON HAWK MARINER
MINUTEMAN SPRINT TRIDENT VIKING
ELECTRICALS
Copyright 2006 Rev. 0, 2006-03-14
Microsemi
Page 3
UM9441
PIN RADIATION DETECTORS
WWW .Microsemi .C OM
NOTES:
NOTES NOTES
Copyright 2006 Rev. 0, 2006-03-14
Microsemi
Page 4

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